Search results for "Ambient pressure"
showing 10 items of 40 documents
Calibration of an airborne HO<sub><i>x</i></sub> instrument using the All Pressure Altitude-b…
2020
Abstract. Laser-induced fluorescence (LIF) is a widely used technique for both laboratory-based and ambient atmospheric chemistry measurements. However, LIF instruments require calibrations in order to translate instrument response into concentrations of chemical species. Calibration of LIF instruments measuring OH and HO2 ( HOx ) typically involves the photolysis of water vapor by 184.9 nm light, thereby producing quantitative amounts of OH and HO2 . For ground-based HOx instruments, this method of calibration is done at one pressure (typically ambient pressure) at the instrument inlet. However, airborne HOx instruments can experience varying cell pressures, internal residence times, tempe…
ChemInform Abstract: New Developments in Nitrogen Fixation.
2010
The production of ammonia from atmospheric dinitrogen at room temperature and ambient pressure in analogy to nature is a long-term goal for coordination chemists. Novel reactions of N2 -containing transition metal complexes with H2 , the first side-on N2 -bridged structure of an actinide complex, and an interesting variation of synthetic N2 fixation are the key points addressed in this contribution. The results are related to the known chemistry of N2 complexes, and their significance is discussed with respect to enzymatic N2 fixation.
Diffusion technique for the generation of gaseous halogen standards
2009
Abstract Halogens are known to play an important role in the tropospheric ozone-depletion chemistry and are of special interest because of their influence on the atmospheric oxidation capacity. In this paper, we investigate the application of a capillary diffusion technique for the generation of gaseous halogen standards like Br 2 , IBr, ICl and I 2 . The influence of capillary dimension (i.e. length and inner diameter), ambient pressure and headspace volume of the diffusion vessel on the test gas output has been evaluated. The experimental output rates are determined from the mass loss of the analyte vessel on a regular schedule and compared with their respective theoretical predictions. W…
High-pressure and high-temperature X-ray diffraction studies of scheelite BaWO4
2009
International audience; We carried out high-pressure (HP) and high-temperature (HT) in situ ADXRD synchrotron measurements in barium tungstate (BaWO4 ) up to 7.5 GPa and 800 K. Coexistence of the scheelite and fergusonite structures was found beyond 7 GPa, both at room temperature and HT, suggesting a polymorphism zone in the P –T phase diagram. The experiments are complemented by thermodynamic calculations within the quasi-harmonic approximation. At ambient pressure, a volume thermal expansivity of 9.5 × 10− 6 K−1 was obtained for scheelite BaWO4 . At HP, the thermal expansivity of the fergusonite doubles that of scheelite. Theoretical equation of state curves at HP and HT are also present…
Nano photoelectron ioniser chip using LaB6 for ambient pressure trace gas detection
2012
A detector including a nanoscaled ioniser chip that surmounts the limitation of conventional photo ionisation detectors is presented. Here, ionisable gaseous substances can be detected by photoelectrons accelerated to the ionisation potential of the incoming gaseous molecules. Thin lanthanum hexaboride (LaB"6) films deposited by pulsed laser technique (PLD) serve as the air stable photocathode material representing the basis of the ioniser chip of the detector. Besides the analysis of the emission behaviour of the photocathode in vacuum and at atmospheric pressure, the detection of different volatile alcohols using the detector with a low-energy UV LED instead of a PID (VUV photon source) w…
Characterization of theTiSiO4structure and its pressure-induced phase transformations: Density functional theory study
2009
Theoretical investigations concerning the possible titanium silicate polymorphs have been performed using density functional theory at B3LYP level. Total-energy calculations and geometry optimizations have been carried out for all phases involved. The following sequence of pressure-driven structural transitions has been found: ${\text{CrVO}}_{4}$-type, $Cmcm$ (in parenthesis the transition pressure), $\ensuremath{\rightarrow}$ zircon-type, $I{4}_{1}/amd$ (0.8 GPa), $\ensuremath{\rightarrow}$ scheelite-type, $I{4}_{1}/a$ (3.8 GPa). At higher pressure the last phase is found to be stable at least up to 25 GPa. The equation of state of the different polymorphs is also reported. We found that t…
An atmospheric pressure chemical ionization-ion-trap mass spectrometer for the on-line analysis of volatile compounds in foods: a tool for linking ar…
2014
An atmospheric pressure chemical ionization ion-trap mass spectrometer was set up for the on-line analysis of aroma compounds. This instrument, which has been successfully employed for some years in several in vitro and in vivo flavour release studies, is described for the first time in detail. The ion source was fashioned from polyether ether ketone and operated at ambient pressure and temperature making use of a discharge corona pin facing coaxially the capillary ion entrance of the ion-trap mass spectrometer. Linear dynamic ranges (LDR), limits of detection (LOD) and other analytical characteristics have been re-evaluated. LDRs and LODs have been found fully compatible with the concentra…
Direct to Indirect Crossover in III-VI Layered Compounds and Alloys under Pressure
1999
The pressure dependence of the optical absorption edge of In1± xGaxSe (0 < x < 0.2) and GaTe has been investigated in order to determine the direct to indirect crossover pressure and the energy difference between the absolute and subsidiary minima of the conduction band at ambient pressure. In the In1± xGaxSe alloy, the crossover pressure decreases with increasing Ga proportion. For InSe, from the extrapolation to x = 0 the band crossover is found to occur at 4.3 GPa and the subsidiary minimum of the conduction band is located, at ambient pressure, (0.32 0.02) eV above the absolute minimum. In addition, the energy difference between the conduction band minima is shown to decrease linearly w…
Effect of Pressure on Direct Optical Transitions of ?-InSe
2000
We have investigated the effect of hydrostatic pressure on direct optical transitions of the layered semiconductor γ-InSe by photoreflectance (PR) spectroscopy (T = 300 K). In addition, electroreflectance (ER) measurements were performed at ambient pressure. Six structures are resolved in the ER spectra in the energy range from 1.1 to 3.6 eV. The pressure dependence of four of these structures was determined by PR spectroscopy for pressures up to 8 GPa. In order to assign the features observed above the fundamental gap we have carried out band structure calculations for InSe at ambient pressure using a full-potential linear augmented plane wave method. Based on calculated band gap deformati…
Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities
2003
We have investigated the temperature dependence of the transport parameters of Sn-doped InSe at different pressures, up to 2.5 GPa. A noticeable change in the temperature dependence of all the transport parameters has been observed above 1.2 GPa. This fact is explained by assuming the transformation of Sn shallow donors into deep donors at a hydrostatic pressure of 1.1 GPa, and by taking into account the transfer of electrons from the absolute minimum to higher energy minima in the conduction band. At ambient pressure, the position of the Sn deep level is estimated to lie 75 ± 20 meV above the absolute conduction-band minimum.